Announcing the latest additions to Qorvo’s innovative RF and power portfolio of SiC FETs, which serve a wide range of EV charging, onboard chargers, energy storage & power supply applications. These high-performance solutions simplify RF and power for designers worldwide.
| Features | UF4SC120023B7S | UF4SC120030B7S | UF4C120053B7S | UF4C120070B7S |
| Typical on-resistance RDS(on), typ of | 30mOhm | 30mOhm | 53mOhm | 70mOhm |
| Max operating temp | 175 degrees | 175 degrees | 175 degrees | 175 degrees |
| Low effective output capacitance Coss(tr) | 200pF | 150pF | 100pF | 71pF |
| Low gate charge | 37.8nC | 37.8nC | 37.8 nC | 37.8nC |
| Package Type | D2PAK-7L | D2PAK-7L | D2PAK-7L | Yes |
| Ideal for EV charging, onboard chargers, energy storage & power supply | Yes | Yes | Yes | Yes |
| RDS(on) Typ @ 25C(mohm) | 23 | 30 | 53 | 72 |
| Excellent reverse recovery | Qrr = 243nC | Qrr = 164nC | Qrr = 98 nC | Qrr = 101nC |
| Low body diode VFSD | 1.2V | 1.22V | 1.28 V | 1.43V |
| ESD Protected | HBM Class 2 | HBM Class 2 | HBM Class 2 | HBM Class 2 |
| VDS Max(V) | 1,200 | 1200 | 1200 | 1200 |
| ID Max(A) | 72 | 56 | 34 | 25.7 |
| Generation | Gen 4 | Gen 4 | Gen 4 | Gen 4 |
| Automotive Qualification | No | No | Yes | yes |
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