power components

1200V, SiC FETs from Qorvo

Announcing the latest additions to Qorvo’s innovative RF and power portfolio of SiC FETs, which serve a wide range of EV charging, onboard chargers, energy storage & power supply applications. These high-performance solutions simplify RF and power for designers worldwide.

Features UF4SC120023B7S UF4SC120030B7S UF4C120053B7S UF4C120070B7S
Typical on-resistance RDS(on), typ of 30mOhm 30mOhm 53mOhm 70mOhm
Max operating temp 175 degrees 175 degrees 175 degrees 175 degrees
Low effective output capacitance Coss(tr) 200pF 150pF 100pF 71pF
Low gate charge 37.8nC 37.8nC 37.8 nC 37.8nC
Package Type D2PAK-7L D2PAK-7L D2PAK-7L Yes
Ideal for EV charging, onboard chargers, energy storage & power supply Yes Yes Yes Yes
RDS(on) Typ @ 25C(mohm) 23 30 53 72
Excellent reverse recovery Qrr = 243nC Qrr = 164nC Qrr = 98 nC Qrr = 101nC
Low body diode VFSD 1.2V 1.22V 1.28 V 1.43V
ESD Protected HBM Class 2 HBM Class 2 HBM Class 2 HBM Class 2
VDS Max(V) 1,200 1200 1200 1200
ID Max(A) 72 56 34 25.7
Generation Gen 4 Gen 4 Gen 4 Gen 4
Automotive Qualification No No Yes yes

Typical Applications

    • EV Charging
    • PV Inverters
    • Switch mode power supplies
    • Power factor correction circuits
    • DC-DC converter circuits
    • Induction heating

Contact us for more information.

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