Tagore Technology’s TP44200NM 650V Gallium Nitride Power FET with integrated driver IC in a compact 22 pin, 5mm x 7mm QFN package. It offers low RDS_(ON) of 180mOhm and fast switching to deliver a highly efficient, low-cost power solution in a small footprint for a variety of applications requiring high power density including USB-PD charger, server and telecom AC-DC power supplies, power factor correction (PFC) converter.

The TP44200NM Power IC has 650V E-modeGaN Power FET, driver, UVLO and high dv/dt immunity with and without supply – all monolithically integrated on GaN-on-Si substrate. The device has low propagation delay for high frequency application and slew rate control through external resistor.