power components
650V GaN Power IC, TP44200NM, GaN Power FET with monolithically integrated driver

650V GaN Power IC, TP44200NM, GaN Power FET with monolithically integrated driver

Tagore Technology’s TP44200NM 650V Gallium Nitride Power FET with integrated driver IC in a compact 22 pin, 5mm x 7mm QFN package. It offers low RDS(ON) of 180mOhm and fast switching to deliver a highly efficient, low-cost power solution in a small footprint for a variety of applications requiring high power density including USB-PD charger, server and telecom AC-DC power supplies, power factor correction (PFC) converter.

The TP44200NM Power IC has 650V E-modeGaN Power FET, driver, UVLO and high dv/dt immunity with and without supply – all monolithically integrated on GaN-on-Si substrate. The device has low propagation delay for high frequency application and slew rate control through external resistor.
SPECIFICATIONS:

Part Number

RDSON

BV

IDS

TProp_Delay

Vcc

PWM Package

TP44200NM

180mOhm

650 V

7.5 A

20ns

7.5V

6V 5mm x 7mm QFN

View datasheet here.

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