power components
750V / 33mOhm, SiC FET, G4, TOLL from Qorvo

750V / 33mOhm, SiC FET, G4, TOLL from Qorvo

The UJ4C075033L8S is a 750V, 33 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving MO-229 package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

Typical Applications:

    • Server and Telecom power supplies
    • Switch mode power supplies
    • DC-DC converter circuits
    • EV Charging Stations
    • PV Inverters

Key Features:

    • On Resistance RDS(on): 33 mohm (typ)
    • Operating temperature: 175C (max)
    • Excellent reverse recovery: Qrr = 89nC
    • Low body diode VFSD: 1.26V
    • Low gate charge: QG = 37.8nC
    • Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive
    • Low intrinsic capacitance
    • ESD protected: HBM class 2 and CDM class C3
    • TOLL package for faster switching, clean gate waveforms

Parameters:

DS Max(V) 750
RDS(on) Typ @ 25C(mohm) 33
ID Max(A) 44
Generation Gen 4
Tj Max(°C) 175
Automotive Qualification No
Package Type TOLL

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