power components
750V / 58mOhm, SiC FET, G4, TOLL from Qorvo

750V / 58mOhm, SiC FET, G4, TOLL from Qorvo

The UJ4C075060L8S is a 750V, 58 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving MO-229 package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

Typical Applications

    • Server and Telecom power supplies
    • Switch mode power supplies
    • DC-DC converter circuits
    • EV Charging
    • PV Inverters

Key Features:

    • On Resistance RDS(on): 58 mohm (typ)
    • Operating temperature: 175C (max)
    • Excellent reverse recovery: Qrr = 70nC
    • Low body diode VFSD: 1.31V
    • Low gate charge: QG = 37.8nC
    • Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive
    • Low intrinsic capacitance
    • ESD protected: HBM class 2 and CDM class C3
    • TOLL package for faster switching, clean gate waveforms


VDS Max(V) 750
RDS(on) Typ @ 25C(mohm) 58
ID Max(A) 27.8
Generation Gen 4
Tj Max(°C) 175
Automotive Qualification No
Package Type TOLL

Contact us for more information.


UWB Delivers a Smoother Ride

Micro-location is essential to digitalizing industrial operations through Industry 4.0, smart factory and LEAN initiatives. Industry strives for two goals – process optimization and safety.

Qorvo at IMS 2024

Discover solutions for SATCOM, defense, aerospace and 5G infrastructure. As systems and applications become more complex, Qorvo’s expertise and high-performance solutions helps you integrate, innovate

1200V, SiC FETs from Qorvo

Announcing the latest additions to Qorvo’s innovative RF and power portfolio of SiC FETs, which serve a wide range of EV charging, onboard chargers, energy

SiC FET 1200V, 70mOhm Qorvo

The UF4C120070B7S from Qorvo is a 1200V, 72mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC