Gen 4 SiC FETs – UJ4C/SC & UF4C/SC Series
With 13 different RDS(on) and package combinations ranging from 6mΩ to 60mΩ in the 750V UJ4C/SC series and six different RDS(on) and package combinations ranging from 23mΩ to 70mΩ in the 1200V UF4C/SC series, our Gen 4 SiC FETs provide designers with the industry’s best performance and multiple device options, enabling more design flexibility that delivers the optimum cost-efficient power design.
- 750V VDS rating
- Low RDS(on) from 6mΩ to 60mΩ
- Best-in-class Figures of Merit (FoM)
- 5µs short-circuit withstand time @ 6mΩ
- Safely driven with standard 0V to 12V or 15V gate drive voltage
- Excellent threshold noise margin maintained with true 5V threshold voltage
- Operates with all Si IGBT, Si MOSFET and SiC MOSFET drive voltages
- Built-in ESD gate protection clamp
- Industry-standard TO-247-3L & TO-247-4L (Kelvin), and D2PAK-7L packages
- Many are AEC-Q101 qualified. Qualification in process for all others.
Technical Product overview can be downloaded here.
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