power components
Available now: Industry-leading 1200V Gen 4 SiC FETs

Available now: Industry-leading 1200V Gen 4 SiC FETs

UnitedSiC (now Qorvo), are charging ahead, delivering new 1200V silicon carbide Gen 4 devices to address the needs of power designers building today’s leading-edge power solutions. Available now, this new UF4C/SC 1200V Gen 4 SiC FET series comes in RDS(on) values from 23mΩ to 70mΩ, delivers the industry’s lowest RDS(on) x A, and best-in-class figures of merit. The Ag-sintered die attach and advanced wafer thinning improve current ratings by 31-48% and reduce Rth,jc by 40-60%. These 1200V SiC FETs provide the optimal power solution for mainstream 800V bus architectures in onboard chargers for EVs, industrial battery chargers, industrial power suppliers, DC/DC in solar, as well as welding machines, UPS, and induction heating applications.

Key Features

  • VDS: 1200V
  • RDS(on): 23/30/53/70mΩ options
  • Industry’s lowest RDS(on) x Area
  • Industry-best FoMs: low Eoss, low Qg, low Coss,tr
  • Simple 0-12V, 0-15V gate drive
    • Compatible with Si MOSFET, IGBT, SiC MOSFET gate drive voltages
  • Excellent integral diode
    • Low VF (1.0-1.5V) and low Qrr
  • Superior thermal performance
  • Industry-standard TO-247-3L and -4L (Kelvin) packages
Part Number Voltage (V) RDS(on) at 25°C RDS(on) at 125°C Package
UF4SC120023K4S 1200 23 42 TO-247-4L
UF4SC120030K4S 1200 30 56 TO-247-4L
UF4C120053K4S 1200 53 112 TO-247-4L
UF4C120053K3S 1200 53 112 TO-247-3L
UF4C120070K4S 1200 72 140 TO-247-4L
UF4C120070K3S 1200 72 140 TO-247-3L

Start Designing Now

Finding your ideal FET is easy with our FET-Jet Calculator™. In just 3 easy steps you can select the most promising SiC FET and Schottky diode solution to make design decisions quickly and confidently.

Contact us if you need further information or to talk through your design.