UnitedSiC (now Qorvo), are charging ahead, delivering new 1200V silicon carbide Gen 4 devices to address the needs of power designers building today’s leading-edge power solutions. Available now, this new UF4C/SC 1200V Gen 4 SiC FET series comes in RDS(on) values from 23mΩ to 70mΩ, delivers the industry’s lowest RDS(on) x A, and best-in-class figures of merit. The Ag-sintered die attach and advanced wafer thinning improve current ratings by 31-48% and reduce Rth,jc by 40-60%. These 1200V SiC FETs provide the optimal power solution for mainstream 800V bus architectures in onboard chargers for EVs, industrial battery chargers, industrial power suppliers, DC/DC in solar, as well as welding machines, UPS, and induction heating applications.

Key Features

• V_DS: 1200V
• RDS(on): 23/30/53/70mΩ options
• Industry’s lowest RDS(on) x Area
• Industry-best FoMs: low Eoss, low Qg, low Coss,tr
• Simple 0-12V, 0-15V gate drive
  • Compatible with Si MOSFET, IGBT, SiC MOSFET gate drive voltages
• Excellent integral diode
  • Low VF (1.0-1.5V) and low Qrr
• Superior thermal performance
• Industry-standard TO-247-3L and -4L (Kelvin) packages

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