power components
BLOG: The Transition from Si to SiC in Power Electronics

BLOG: The Transition from Si to SiC in Power Electronics

Power electronics like Si MOSFETs, SiC MOSFETs, GaN HEMTs or SiC FETs are the main technological building blocks used in many market areas. For a long time, Si has been the semiconductor material of choice in power electronics applications. Recently, there has been a shift away from Si to SiC devices, mostly due to the significant improvements in the performance and reliability of SiC technology.

The performance advantages offered by SiC have been life-changing in many power-electronic markets; electric vehicles, white goods, infrastructure, solar energy/renewables, data centers, and more. With SiC’s larger bandgap energy (i.e., 3.3eV, as opposed to Si’s 1.1eV – see Figure 2) and its higher breakdown voltage, SiC can be exploited to create newer, higher-performance solutions.

The Advantages of Using SiC Versus Si

To begin, SiC MOSFETs, or SiC FETs, have several advantages over Si devices. For starters, SiC has a much higher breakdown voltage, meaning a much thinner device can be used to support higher voltage

Silicon carbide allows engineers to design for higher power levels with better efficiency, higher switching speeds, and superior thermal performance.

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