Tagore Technology was founded in January 2011 to pioneer Gallium Nitride-on-Silicon (GaN-on-Si) semiconductor technology for Radio Frequency (RF) and power management applications.
Tagore offers innovative solutions based on Gallium Nitride-on-Silicon (GaN-on-Si), Gallium Nitride (GaN)-on-silicon carbide (SiC) and Gallium Arsenide technologies. Leveraging wide-bandgap capabilities, our proprietary technologies significantly reduce complexity, size and power consumption in a wide variety from 5G infrastructure to consumer, automotive and defence and public safety applications.
Tagore offers a portfolio of GaN FET integrated with driver suitable for customers to build high power density and high-efficiency AC/DC converters. Our GaN FETs are particularly suitable for realizing a bridgeless totem pole PFC where one half bridge is composed of GaN FET’s and the other half bridge is composed of MOSFET’s. Tagore GaN FETs with drivers are ideally suited for DC/DC converter applications such as in LLC or Phase Shifted Full Bridge (PSFB) topologies as illustrated below. Tagore GaN FETs are suitable for secondary side Synchronous rectification when the output voltage is high, such as the case of an Electric Vehicle (EV) battery charger.
Tagore offers a portfolio of GaN FET integrated with driver suitable for customers to realize high power density compact GaN based USB PD charger. A sample reference design is shown below. Only low side GaN FET will be used for realizing a quasi-resonant flyback (QRF) converter whereas high side and lowside GaN FETs are needed for topologies like active clamp flyback converter (ACF)
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