UJ4C/SC & UF4C/SC Series

Highest-performance, most efficient SiC FETs.
Delivered.

With 13 different RDS(on) and package combinations ranging from 6mΩ to 60mΩ in the 750V UJ4C/SC series and six different RDS(on) and package combinations ranging from 23mΩ to 70mΩ in the 1200V UF4C/SC series, our Gen 4 SiC FETs provide designers with the industry’s best performance and multiple device options, enabling more design flexibility that delivers the optimum cost-efficient power design.

Design Flexibility – Optimize for efficiency, thermal management, complexity and cost

Product Specifications:

Voltage	RDS(on) (mΩ) @ 25°C	RDS(on) (mΩ) @ 125°C	TO-247-3L	TO-247-4L	D2PAK-7L
750V	5.9	9.8	–	UJ4SC075006K4S	–
750V	9	14.8	–	UJ4SC075009K4S	UJ4SC075009B7S
750V	11	18.4	–	UJ4SC075011K4S	UJ4SC075011B7S
750V	18	29	–	–	UJ4SC075018B7S
750V	18	31	UJ4C075018K3S	UJ4C075018K4S	–
750V	23	39	UJ4C075023K3S	UJ4C075023K4S	UJ4C075023B7S
750V	33	57	UJ4C075033K3S	UJ4C075033K4S	UJ4C075033B7S
750V	44	75	UJ4C075044K3S	UJ4C075044K4S	UJ4C075044B7S
750V	58	106	UJ4C075060K3S	UJ4C075060K4S	UJ4C075060B7S
1200V	23	42	–	UF4SC120023K4S	–
1200V	30	56	–	UF4SC120030K4S	–
1200V	53	112	UF4C120053K3S	UF4C120053K4S	–
1200V	72	140	UF4C120070K3S	UF4C120070K4S	–

Industry-leading Figures of Merit (FoM)

Figure-of-Merit (FoM) comparisons are critical for power designers to identify the best technology for their design, not merely based on a specific product spec, but by comparing performance widely across a variety of topologies, power levels, etc.

The UnitedSiC (now Qorvo) high-performance Gen 4 series deliver lower conduction loss, simple gate driving, and reduced switching losses in hard and soft-switched circuits compared to competing SiC FET devices.