Qorvo’s new family of SiC modules leverages a unique cascode JFET configuration to deliver better thermal performance and longer product lifetime, all with a familiar E1B package.
Qorvo’s portfolio of highly integrated silicon carbide (SiC) power modules feature multiple 1200V FETs in easy-to-use E1B packaging. These FETs leverage Qorvo’s unique cascode configuration where a high-performance SiC JFET is co-packaged with a cascode optimized Si-MOSFET, thereby reducing RDS(on), switching loss, and thermal resistance, while maximizing efficiency.
Qorvo’s PAC52410 expands Qorvo’s broad portfolio of full-featured Power Application Controller® (PAC) products – highly optimized System On Chip (SOC) for controlling and powering next
Mike Engelhardt has been designing SPICE models for 40 years. Read about his journey from rural Michigan, to living physics concepts, to building tools that
Qorvo contributed articles to this Springer SiC book from editor Maurizio Di Paolo Emilio. Find out about the transformative role of SiC in power conversion
By leveraging Qorvo’s advanced SiC FET technology, Qorvo’s SiC modules significantly enhance thermal performance through reduced R DS(on) and switching losses. Discover how these easy-to-use
