This Qorvo SiC FET device (UF4SC120030B7S ) is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving D2PAK-7L package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
Parameters:
| VDS Max(V) | 1,200 |
| RDS(on) Typ @ 25C(mohm) | 30 |
| ID Max(A) | 56 |
| Generation | Gen 4 |
| Tj Max(°C) | 175 |
| Automotive Qualification | No |
| Package Type | D2PAK-7L |
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