power components
Qorvo SiC FET 1200V, 30mOhm

Qorvo SiC FET 1200V, 30mOhm

This Qorvo SiC FET device (UF4SC120030B7S ) is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving D2PAK-7L package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

Typical Applications:

    • EV Charging
    • PV Inverters
    • Switch mode power supplies
    • Power factor correction circuits
    • DC-DC converter circuits
    • Induction heating

Key Features:

  • On Resistance RDS(on): 30 mohm (typ)
  • Operating temperature: 175C (max)
  • Excellent reverse recovery: Qrr = 164nC
  • Low body diode VFSD: 1.22V
  • Low gate charge: QG = 37.8nC
  • Low intrinsic capacitance
  • ESD Protected: HBM Class 2
  • D2PAK-7L package
  • Ideal for EV charging, onboard chargers, energy storage & power supply
  • Low effective output capacitance Coss(tr)=150pF

Parameters:

VDS Max(V) 1,200
RDS(on) Typ @ 25C(mohm) 30
ID Max(A) 56
Generation Gen 4
Tj Max(°C) 175
Automotive Qualification No
Package Type D2PAK-7L

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