power components
Qorvo SiC FET 1200V, 53mOhm

Qorvo SiC FET 1200V, 53mOhm

The UF4C120053B7S from Qorvo is a 1200V, 53 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving D2 PAK-7L package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

AEC-Q101 Qualified

Typical Applications:

    • EV Charging
    • PV Inverters
    • Switch mode power supplies
    • Power factor correction circuits
    • DC-DC converter circuits
    • Induction heating

Key Features:

    • On Resistance RDS(on): 53 mohm (typ)
    • Operating temperature: 175 C (max)
    • Excellent reverse recovery: Qrr = 98 nC
    • Low body diode VFSD: 1.28 V
    • Low gate charge: QG = 37.8 nC
    • Low intrinsic capacitance
    • ESD Protected: HBM Class 2
    • D2PAK-7L package
    • Ideal for EV charging, onboard chargers, energy storage & power supply

Parameters:

VDS Max(V) 1,200
RDS(on) Typ @ 25C(mohm) 53
ID Max(A) 34
Generation Gen 4
Tj Max(°C) 175
Automotive Qualification Yes
Package Type D2PAK-7L

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