power components

Qorvo SiC FET 200V, 23mOhm

Qorvo’s UF4SC120023B7S SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the D2PAK-7L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

Key Features:

    • On Resistance RDS(on): 23 mohm (typ)
    • Operating temperature: 175C (max)
    • Excellent reverse recovery: Qrr = 243nC
    • Low body diode VFSD: 1.2V
    • Low gate charge: QG = 37.8nC
    • Low intrinsic capacitance
    • ESD Protected: HBM Class 2

Typical Applications:

    • EV Charging
    • PV Inverters
    • Switch mode power supplies
    • Power factor correction circuits
    • DC-DC converter circuits
    • Induction heating

Parameters:

VDS Max(V) 1,200
RDS(on) Typ @ 25C(mohm) 23
ID Max(A) 72
Generation Gen 4
Tj Max(°C) 175
Automotive Qualification No
Package Type D2PAK-7L

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