This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the D2PAK-7L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
| VDS Max(V) | 1,200 |
| RDS(on) Typ @ 25C(mohm) | 23 |
| ID Max(A) | 72 |
| Generation | Gen 4 |
| Tj Max(°C) | 175 |
| Automotive Qualification | No |
| Package Type | D2PAK-7L |
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