Qorvo’s UJ4SC075009B7S is a 750 V, 9 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the D2PAK-7L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
Parameters:
| VDS Max(V) | 750 |
| RDS(on) Typ @ 25C(mohm) | 9 |
| ID Max(A) | 106 |
| Generation | Gen 4 |
| Tj Max(°C) | 175 |
| Automotive Qualification | Yes |
| Package Type | D2PAK-7L |
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