power components
Qorvo’s UJ4SC075009B7S 750 V, 9 mohm SiC FET

Qorvo’s UJ4SC075009B7S 750 V, 9 mohm SiC FET

Qorvo’s UJ4SC075009B7S is a 750 V, 9 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the D2PAK-7L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

Typical Applications:

    • EV Charging
    • PV Inverters
    • Switched-Mode Power Supplies
    • Power Factor Correction Modules
    • Motor Drives
    • Induction Heating

Parameters:

VDS Max(V) 750
RDS(on) Typ @ 25C(mohm) 9
ID Max(A) 106
Generation Gen 4
Tj Max(°C) 175
Automotive Qualification Yes
Package Type D2PAK-7L

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