power components
SiC FET 1200V, 70mOhm Qorvo

SiC FET 1200V, 70mOhm Qorvo

The UF4C120070B7S from Qorvo is a 1200V, 72mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving D2 PAK-7L package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

AEC-Q101 Qualified

Typical Applications:

    • EV Charging
    • PV Inverters
    • Switch mode power supplies
    • Power factor correction circuits
    • DC-DC converter circuits
    • Induction heating

Key Features:

  • On Resistance RDS(on): 72mohm (typ)
  • Operating temperature: 175C (max)
  • Excellent reverse recovery: Qrr = 101nC
  • Low body diode VFSD: 1.43V
  • Low gate charge: QG = 37.8nC
  • Low intrinsic capacitance
  • ESD Protected: HBM Class 2
  • Low effective output capacitance Coss(tr)=71pF
  • Ideal for EV charging, onboard chargers, energy storage & power supply


VDS Max(V) 1,200
RDS(on) Typ @ 25C(mohm) 72
ID Max(A) 25.7
Generation Gen 4
Tj Max(°C) 175
Automotive Qualification Yes
Package Type D2PAK-7L

Contact us for more information.


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