power components


1200V, 220mOhm max Rdson, SiC Cascode TO-247 by United Silicone Carbide Inc.

United Silicon Carbide’s cascode products co-package its xJ series high-performance SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.

This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive. These devices have built-in zener diodes to protect the gate from electrostatic discharge (ESD).


  • Max. on-resistance RDS(on)max of 220mW
  • Standard 12V gate drive
  • Maximum operating temperature of 150°C
  • Excellent reverse recovery
  • Low gate charge
  • Low intrinsic capacitance
  • Gate-source ESD protection
  • RoHS compliant

Typical applications:

  • EV charging
  • PV inverters
  • Switch mode power supplies
  • Power factor correction modules
  • Motor drives
  • Induction heating