1200V, 220mOhm max Rdson, SiC Cascode TO-247 by United Silicone Carbide Inc.
United Silicon Carbide’s cascode products co-package its xJ series high-performance SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.
This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive. These devices have built-in zener diodes to protect the gate from electrostatic discharge (ESD).
Features:
Typical applications:
Qorvo’s PAC52410 expands Qorvo’s broad portfolio of full-featured Power Application Controller® (PAC) products – highly optimized System On Chip (SOC) for controlling and powering next
Mike Engelhardt has been designing SPICE models for 40 years. Read about his journey from rural Michigan, to living physics concepts, to building tools that
Qorvo contributed articles to this Springer SiC book from editor Maurizio Di Paolo Emilio. Find out about the transformative role of SiC in power conversion
By leveraging Qorvo’s advanced SiC FET technology, Qorvo’s SiC modules significantly enhance thermal performance through reduced R DS(on) and switching losses. Discover how these easy-to-use
